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Search Results
Yugo Takashima, Yu-qiao Zhang*, Jiake Wei, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta*, "Layered cobalt oxide epitaxial films exhibiting thermoelectric ZT = 0.11 at room temperature", J. Mater. Chem. A, 2021, 9, 274 （DOI: 10.1039/D0TA07565E）
*X. Fang, L. Porz, K. Ding, *A. Nakamura,, "Bridging the Gap between Bulk Compression and Indentation Test on Room-Temperature Plasticity in Oxides: Case Study on SrTiO3,", Crystals, 10, 933, (2020). （https://doi.org/10.3390/cryst10100933）
Ryosuke Umemura, Tomoharu Tokunaga, Takahisa Yamamoto*, "Flash sintering for BaTiO3 with square alternating current field including zero-field duration", Journal of the Ceramic Society of Japan, 128, 1018, Oct. 2020. （http://doi.org/10.2109/jcersj2.20181）
Dou-dou Liang*#, Binjie Chen#, Hai Jun Cho, and Hiromichi Ohta*, "Thickness Optimization toward High-Performance Bottom-Gated Transparent Tin Dioxide Thin-Film Transistor", ACS Appl. Electron. Mater. 2, 3454-3458 (2020). （DOI:10.1021/acsaelm.0c00711）
K. Nakazawa, S. Amma, and T. Mizoguchi, "“In situ observation of the dynamics in the middle stage of spinodal decomposition of a silicate glass via scanning transmission electron microscopy”", Acta Mater. 200 (2020) 720-726. （https://doi.org/10.1016/j.actamat.2020.09.036）
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Yuxiang Li, Shugo Daikuhara, Satoshi Hori, Xueying Sun, Kota Suzuki, Masaaki Hirayama, and Ryoji Kanno*, "Oxygen Substitution for Li−Si−P−S−Cl Solid Electrolytes toward Purified Li10GeP2S12-Type Phase with Enhanced Electrochemical Stabilities for All-Solid-State Batteries", Chem. Mater. 2020, 32, 8860-8867. （DOI:https://doi.org/10.1021/acs.chemmater.0c02351）
K. Nakazawa, S. Amma, and T. Mizoguchi*, "In situ observation of the dynamics in the middle stage of spinodal decomposition of a silicate glass via scanning transmission electron microscopy", Acta Mater. 200, 720-726, Sep. 2020 （DOI: 10.1016/j.actamat.2020.09.036）
Fabian Krahl, Yuzhang Wu, Hai Jun Cho*, Maarit Karppinen, and Hiromichi Ohta*, "Spontaneous Generation of Carrier Electrons at the Interface between Polycrystalline ZnO and Amorphous InGaZnO4", Adv. Electron. Mater. 6, 2000404 (2020). （DOI:10.1002/aelm.202000404）
